In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films
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چکیده
منابع مشابه
In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films
Hydrogen doped In₂O₃ thin films were prepared by room temperature sputter deposition with the addition of H₂O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm²/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we presen...
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ژورنال
عنوان ژورنال: Materials
سال: 2015
ISSN: 1996-1944
DOI: 10.3390/ma8020561